YQ20NL10SDFHTL

Single Diodes Overview

The YQ20NL10SDFHTL is a single Schottky barrier diode manufactured by ROHM Semiconductor, designed for high-efficiency applications. It features a Trench MOS structure to improve the trade-off between low forward voltage and low reverse current. The device operates with a maximum repetitive reverse voltage of 100 V and an average rectified forward current of 20 A. Key electrical parameters include a maximum forward voltage of 880 mV at 20 A, a maximum reverse current of 70 uA at 100 V, and a peak forward surge current of 150 A. It supports a maximum operating junction temperature of +150 °C and is housed in a TO-263L-3 (LPDL) surface-mount package.

Single Diodes Feature Summary

• Utilizes a proprietary Trench MOS structure to achieve ultra-fast reverse recovery time (trr), reducing switching power loss compared to standard trench MOS products.
• Optimizes the balance between low forward voltage (VF) and low reverse leakage current (IR) for improved efficiency.
• Ensures stable operation at high temperatures while maintaining low capacitance characteristics.

Single Diodes Applications

• Switching power supplies
• Freewheel diodes
• Reverse polarity protection circuits

Single Diodes Procurement Notes

Verify the specific suffix 'HTL' against the official datasheet to confirm tape-and-reel packaging details and quantity per reel. Ensure the component meets AEC-Q101 automotive grade requirements if used in vehicle electronics. Cross-reference the RoHS compliance status with the latest manufacturer documentation before integration into production.

Single Diodes Selection Notes

Select this component when designing circuits requiring high efficiency and fast switching speeds in a TO-263L package. Consider the 100 V rating and 20 A continuous current capacity for appropriate thermal management. Evaluate the trade-off between VF and IR based on the specific load conditions and desired operational temperature range.

Single Diodes Part Context

This part belongs to the YQ series, which represents ROHM's first generation of Schottky barrier diodes utilizing a Trench MOS structure. This technology addresses the limitations of conventional planar structures by offering superior switching performance and reduced power consumption in high-frequency applications.

Single Diodes Replacement Considerations

The YQ20BM10SDFH is a similar product within the same series but utilizes a TO-252 (DPAK) package instead of the TO-263L form factor. Verify pinout compatibility and thermal dissipation requirements when substituting packages.