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Product Detailed Parameters
- Description：TRANS 2NPN DUAL 17.5V 5A SM8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：5A
- Voltage - Collector Emitter Breakdown (Max)：17.5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 50mA, 5A
- Current - Collector Cutoff (Max)：10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：300 @ 500mA, 2V
- Power - Max：2.75W
- Frequency - Transition：150MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-223-8
- Supplier Device Package：SM8
- Grade：-
- Qualification：-
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Overview
The ZDT1048TA is a dual NPN medium-power high-gain transistor manufactured by Diodes Incorporated. It integrates two NPN transistors within an SM-8 surface-mount package to provide a compact solution for power switching applications. The device features a collector-emitter voltage (VCEO) of 17.5V and supports a continuous collector current (IC) of 5A. Key electrical characteristics include a maximum total power dissipation of 2.75W when both dies are active, a low saturation voltage (VCE(sat)) of less than 75mV at 1A, and a static forward current transfer ratio (hFE) ranging from 280 to 1200 depending on operating conditions.
Feature Summary
- Dual NPN Device
- Very Low Saturation Voltage
- High Gain
- SM-8 Package
Applications
- CCFL inverters
- Royer circuits
Procurement Notes
Verify the specific ordering suffix 'TA' against official documentation to confirm reel size and packing quantity details. Ensure compliance with standard terms and conditions prior to acquisition. Confirm that the component meets all necessary safety and functional standards for the intended application environment.
Selection Notes
Evaluate the thermal resistance and power dissipation limits under actual PCB mounting conditions. Verify that the required base drive current aligns with the specified hFE ranges to maintain optimal saturation performance. Consider the transition frequency and switching times if high-speed operation is required in the target circuit design.
Part Context
This component belongs to the ZDT series of dual medium-power transistors designed for space-constrained applications. It utilizes advanced process capability to achieve high performance within the SM-8 package format. The device is suitable for automotive applications requiring specific change control protocols.
Replacement Considerations
Consult official manufacturer resources for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter alignment before implementing any alternative components in existing designs.
