ZDT1049QTA

ZDT1049QTA

$0.77
  • Description:TRANS 2NPN DUAL 25V 5A SM-8
  • Series:-

SKU:2ff85a98265d Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN DUAL 25V 5A SM-8
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):5A
  • Voltage - Collector Emitter Breakdown (Max):25V
  • Vce Saturation (Max) @ Ib, Ic:220mV @ 50mA, 4A
  • Current - Collector Cutoff (Max):10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 1A, 2V
  • Power - Max:2.75W
  • Frequency - Transition:180MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-223-8
  • Supplier Device Package:SM-8
  • Grade:-
  • Qualification:-

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ZDT1049QTA

Overview

The ZDT1049QTA is a dual NPN medium-power high-gain transistor from Diodes Incorporated, housed in an SM-8 package. It features two independent NPN transistors with a collector-emitter voltage (VCEO) of 25 V and a continuous collector current (IC) of 5 A per die. The device offers a static forward current transfer ratio (hFE) ranging from 250 to 1200 depending on operating conditions. Total power dissipation reaches 2.75 W when both dies are active at +25°C ambient temperature. Operating and storage temperatures span -55°C to +150°C.

Feature Summary

  • Dual NPN configuration within a single compact SM-8 package
  • High gain characteristics suitable for amplification applications
  • Robust thermal performance supporting up to 2.75 W total power dissipation
  • Wide operating temperature range extending to +150°C

Applications

  • Automotive systems requiring specific change control protocols
  • General-purpose switching and amplification circuits
  • Industrial control modules utilizing medium-power transistors

Procurement Notes

Verify the exact ordering suffix against official Diodes documentation before procurement. Confirm that the SM-8 package dimensions match your PCB footprint requirements. Ensure your design accounts for the specified derating curves above +25°C ambient temperature to maintain safe junction temperatures during operation.

Selection Notes

Select this component for designs requiring dual NPN transistors with high current handling capabilities. Evaluate the hFE ranges under your specific load conditions to ensure adequate gain. Consider the thermal resistance values when designing heat dissipation strategies for enclosed environments or high-duty cycle operations.

Part Context

This part belongs to Diodes Incorporated's lineup of discrete semiconductor devices designed for robust electronic applications. The SM-8 package provides a space-efficient solution for integrating multiple transistors. It serves as a medium-power alternative to smaller signal transistors while offering higher current capacity than larger power packages.

Replacement Considerations

Consult Diodes Incorporated directly for approved substitute components. Verify pin compatibility and electrical specifications if considering alternatives from other manufacturers. Ensure any replacement meets the same automotive qualification standards if required by your application.

ZDT1049QTAZDT1049QTA
$0.77
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