ZDT1049TC

Overview

The ZDT1049TC is a dual NPN medium-power high-gain transistor manufactured by Diodes Incorporated in an SM-8 package. It features two independent NPN transistors within a single molded plastic housing with matte tin-plated leads. The device supports a continuous collector current of 5 A and withstands a collector-emitter voltage of 25 V. Key electrical characteristics include a collector-base breakdown voltage of 80 V, a transition frequency of 180 MHz, and a static forward current transfer ratio (hFE) ranging from 250 to 1200 depending on operating conditions. Total power dissipation reaches 2.75 W when both dies are active.

Feature Summary

• Dual NPN configuration providing two independent switching elements in one compact surface-mount package
• High gain capability suitable for amplification and general-purpose switching applications
• Automotive-grade qualification available through specific ordering suffixes

Applications

• General-purpose switching circuits
• Amplifier stages requiring medium power handling
• Automotive electronic control modules

Procurement Notes

Verify the exact ordering suffix against the manufacturer's official documentation before procurement. Suffixes determine specific packaging formats, tape-and-reel quantities, and automotive qualification levels such as AEC-Q100 compliance. Confirm that the selected variant matches the required RoHS status and manufacturing facility certifications for your supply chain needs.

Selection Notes

Evaluate the thermal resistance values carefully, noting that total power dissipation decreases significantly if only one die is active compared to both being active simultaneously. Ensure the base drive current meets the minimum requirements for saturation at the intended collector load. Verify that the operating temperature range aligns with the system's environmental constraints.

Part Context

This component belongs to the ZDT series of dual medium-power transistors designed for space-constrained PCB layouts. The SM-8 package offers a footprint alternative to traditional discrete dual-transistor configurations, reducing board area while maintaining robust current handling capabilities for industrial and automotive systems.

Replacement Considerations

Consult the manufacturer's datasheet for officially recommended substitute part numbers. Cross-reference pinout compatibility and absolute maximum ratings to ensure functional equivalence without redesigning the printed circuit board layout or modifying existing bias networks.

FAQ

What is the maximum collector-emitter voltage for this device?

The maximum collector-emitter voltage (VCEO) is rated at 25 V.

How does the power dissipation change based on die usage?

Total power dissipation is 2.25 W when any single die is on, and increases to 2.75 W when both dies are on equally.

Is this component qualified for automotive applications?

Specific variants are qualified to AEC-Q100/101/104/200 standards and are PPAP capable; customers must contact the manufacturer for these specific parts.