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The ZDT617TA is a dual NPN medium power high gain transistor manufactured by Diodes Incorporated. It features two independent NPN transistors housed in an SM-8 (SOT-223) package. The device supports a continuous collector current of 3A and a peak pulse current of 12A. Collector-emitter breakdown voltage is rated at 15V, with a transition frequency of 80 to 120 MHz. Static forward current transfer ratio ranges from 80 to 450 depending on operating conditions. Total power dissipation reaches 2.5W when both dies are active equally.
Verify the specific ordering suffix against manufacturer documentation to confirm packaging type and marking details. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance status prior to integration into regulated assemblies. Validate that the SM-8 package dimensions match the target PCB footprint design constraints.
Select this component for designs requiring two matched NPN transistors in a compact SOT-223 form factor. Evaluate thermal derating curves if ambient temperatures exceed 25°C. Consider the 15V collector-emitter voltage limit when designing for higher supply rails. Verify base drive currents meet the saturation requirements specified for the intended load current levels.
This part belongs to the ZDT617 series of dual NPN transistors. The TA suffix typically denotes a specific tape and reel or cut tape packaging variant used by Diodes Incorporated. It shares core electrical specifications with other suffixes in the family while differing only in shipping configuration.
Direct substitutes must offer identical dual NPN topology, SM-8 package, and comparable 15V/3A ratings. Verify pinout compatibility between C1/E1/B1 and C2/E2/B2 configurations. Check equivalent hFE ranges and thermal resistance values to ensure circuit performance parity.