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The ZDT6790TC is a complementary medium power high gain transistor array in an SM-8 package. It integrates one NPN and one PNP bipolar junction transistor (BJT). The NPN transistor provides a collector-emitter breakdown voltage of 45V, continuous collector current of 2A, and a minimum DC current gain of 150 at 2A. The PNP transistor offers a collector-emitter breakdown voltage of -40V, continuous collector current of -2A, and a minimum DC current gain of 150 at -2A. Both transistors operate within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix TC against official Diodes Incorporated documentation to confirm reel size and quantity specifications. Ensure compliance with RoHS and REACH directives as stated in the datasheet. Confirm that the SM-8 package dimensions match the target PCB layout requirements before finalizing procurement.
Select this component when a matched complementary pair with high current handling capability is required. The SM-8 package facilitates surface mount assembly. Evaluate thermal resistance values under actual operating conditions to ensure junction temperatures remain within safe limits during continuous operation.
The ZDT6790 series consists of complementary medium power transistors designed for robust performance. The ZDT6790TC variant specifically denotes the tape and reel packaging format containing 4,000 units per 13-inch reel. This part belongs to the broader family of high-gain BJT arrays manufactured by Diodes Incorporated.
Consult the manufacturer's datasheet for officially listed equivalent parts or direct replacements. Verify pinout compatibility and electrical parameter margins before substituting.