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The ZDT749TA is a dual PNP medium power transistor manufactured by Diodes Incorporated, housed in an SM-8 (SOT-223) surface-mount package. It features two independent PNP transistors within a single component. Key electrical ratings include a collector-emitter voltage of -25 V and a continuous collector current of -2 A per die. The device supports a total power dissipation of up to 2.75 W when both dies are active equally at 25°C ambient temperature. Transition frequency reaches 160 MHz, with switching times of 40 ns turn-on and 450 ns turn-off under specified test conditions.
Verify the specific ordering suffix against manufacturer documentation to confirm package variant and tape/reel specifications. Ensure compatibility with peak pulse current limits during transient events. Confirm thermal management requirements align with derating curves provided in the datasheet for reliable operation under varying ambient temperatures.
Select this component when a dual PNP configuration is required in a surface-mount form factor. Evaluate thermal resistance values against expected power dissipation to ensure junction temperatures remain within safe operating limits. Consider the transition frequency and switching speeds for high-speed application suitability compared to slower alternatives.
This part belongs to the ZDT series of dual transistors from Diodes Incorporated. The SM-8 package provides a robust solution for medium-power applications. It serves as a discrete alternative to integrated dual-transistor arrays, offering flexibility in circuit design while maintaining a small footprint.
Check pinout compatibility and absolute maximum ratings before substituting. Verify that any replacement part matches the SM-8 package dimensions and thermal characteristics. Ensure the substitute offers equivalent or superior hFE and switching performance for the intended application.
The total power dissipation is 2.25 W if only one die is on, and 2.75 W if both dies are on equally at 25°C ambient temperature.
The transition frequency (fT) is typically 160 MHz, measured at IC=-100mA, VCE=-5V, and f=100MHz.
At IC=-2A and IB=-200mA, the collector-emitter saturation voltage (VCE(sat)) has a maximum value of -0.5 V.