ZDT751TC

Overview

The ZDT751TC is a dual PNP medium-power transistor manufactured by Diodes Incorporated in an SM-8 package. It contains two independent silicon transistors with a maximum collector-emitter voltage of -60V and a continuous collector current of -2A per element. The device supports a total power dissipation of 2.75W when both dies are active at +25°C. Electrical characteristics include a transition frequency of up to 140MHz, a static forward current transfer ratio (hFE) ranging from 40 to 300 depending on current levels, and saturation voltages as low as -0.15V at 1A. Operating temperatures range from -55°C to +150°C.

Feature Summary

• Dual configuration providing two independent PNP transistors within a single surface-mount package
• Designed for automotive applications requiring specific change control and AEC-Q100/101/104/200 qualification
• Capable of high continuous collector current and supporting significant power dissipation under standard PCB mounting conditions

Applications

• Automotive circuits requiring AEC-Q100 qualified components
• General-purpose switching and amplification tasks in electronic systems
• Applications utilizing the SM-8 package for space-constrained designs

Procurement Notes

Verify the exact ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all necessary environmental and quality standards required for the intended deployment environment before finalizing procurement orders.

Selection Notes

Select this component for designs requiring dual PNP transistors with a -60V rating and -2A current capacity. Ensure thermal management strategies account for the specified derating factors above +25°C. Verify that the SM-8 package dimensions align with the printed circuit board layout requirements.

Part Context

The ZDT751TC belongs to the ZDT751 series of dual PNP medium-power transistors produced by Diodes Incorporated. This series utilizes the SM-8 surface-mount package to provide compact integration of two separate transistor elements. The device is engineered to meet automotive industry standards for reliability and change control.

Replacement Considerations

Consult the manufacturer's cross-reference tools or authorized distributors for verified substitute part numbers. Ensure any replacement maintains identical electrical ratings, pin configurations, and package dimensions to guarantee compatibility with existing designs.