ZDT758TA

Overview

The ZDT758TA is a dual PNP medium power transistor housed in an SM-8 (SOT-223) package. It contains two independent PNP transistors with a collector-emitter voltage of -400V and continuous collector current of -0.5A per die. The device supports a peak pulse current of -1A and operates within a junction temperature range of -55°C to +150°C. Total power dissipation reaches 2.75W when both dies are active equally, or 2.25W for a single die. Key electrical characteristics include a transition frequency of 50MHz and a minimum DC current gain of 40 at high currents.

Feature Summary

• Dual configuration providing two independent PNP transistors in a single surface-mount package
• High-voltage capability rated at -400V collector-base and collector-emitter breakdown voltages
• Robust thermal performance supporting up to 2.75W total power dissipation under balanced load conditions

Applications

• High-voltage switching circuits requiring dual-channel control
• Power supply output stages utilizing medium-power PNP configurations
• Industrial control systems operating under elevated temperature environments

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm packaging type and compliance status. Ensure the component matches the required SM-8 footprint and pinout configuration for your PCB layout. Confirm that the sourcing channel provides original manufacturer seals to prevent counterfeit components from entering the supply chain.

Selection Notes

Select this component when a dual PNP topology is required within a compact SOT-223 form factor. Evaluate the -400V rating against circuit voltage spikes to ensure adequate safety margins. Consider the thermal resistance values when designing heat dissipation strategies for applications where both internal dies may conduct simultaneously.

Part Context

This part belongs to the ZDT series of dual medium power transistors manufactured by Diodes Incorporated. The SM-8 package integrates two separate silicon planar structures into one housing. This design reduces board space compared to using discrete single transistors while maintaining high-voltage isolation capabilities between the two channels.

Replacement Considerations

Direct replacements must match the SM-8 package, -400V rating, and dual PNP configuration. Verify pin compatibility and thermal characteristics before substitution.