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Product Detailed Parameters
- Description：TRANS 2PNP DUAL 400V 500MA SM8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：500mA
- Voltage - Collector Emitter Breakdown (Max)：400V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max)：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 200mA, 10V
- Power - Max：2.75W
- Frequency - Transition：50MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-223-8
- Supplier Device Package：SM8
- Grade：-
- Qualification：-
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Overview
The ZDT758TC is a dual PNP medium power transistor manufactured by Diodes Incorporated, housed in an SM-8 (SOT-223) package. It features two independent PNP transistors within a single component. Key electrical specifications include a collector-base voltage of -400 V and a collector-emitter voltage of -400 V. The continuous collector current is rated at -0.5 A, with a peak pulse current capability of -1 A. Total power dissipation reaches 2.75 W when both dies are active equally at 25°C ambient temperature. The transition frequency is specified at 50 MHz.
Feature Summary
- Dual configuration providing two independent PNP transistors in one compact surface-mount package
- High voltage rating supporting up to -400 V collector-emitter breakdown
- Low saturation voltage characteristics for efficient switching performance
- Robust thermal management capabilities with high total power dissipation ratings
Applications
- High voltage switching circuits requiring dual channel control
- Power supply designs utilizing medium power PNP configurations
- Industrial control systems operating under elevated temperature conditions
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm packaging type and compliance status. Ensure the component matches the required SM-8 package dimensions and pinout configuration for your PCB layout. Cross-reference the datasheet revision date to confirm parameter accuracy before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring dual PNP channels with high voltage tolerance. Evaluate thermal resistance values based on expected power dissipation and ambient temperature conditions. Consider the transition frequency limits for high-speed switching requirements. Verify that the continuous collector current meets the maximum load demands of the target circuit design.
Part Context
This device belongs to the ZDT series of dual medium power transistors from Diodes Incorporated. It shares the SM-8 package form factor with other components in the family but offers distinct voltage and current ratings tailored for high-voltage applications. The dual configuration allows for space-saving designs compared to using discrete single transistors.
Replacement Considerations
ZDT758
FAQ
What is the maximum collector-emitter voltage for the ZDT758TC?
The maximum collector-emitter voltage (VCEO) is -400 V.
How many transistors are contained within the ZDT758TC package?
The ZDT758TC contains two independent PNP transistors.
What is the total power dissipation when both dies are active?
The total power dissipation is 2.75 W when both dies are on equally at 25°C ambient temperature.
