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Product Detailed Parameters
- Description：TRANS 2NPN/2PNP 20V 2.5A SM8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN, 2 PNP (H-Bridge)
- Current - Collector (Ic) (Max)：2.5A
- Voltage - Collector Emitter Breakdown (Max)：20V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 50mA, 2.5A
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2A, 2V
- Power - Max：1.25W
- Frequency - Transition：140MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-223-8
- Supplier Device Package：SM8
- Grade：-
- Qualification：-
Download product information
Overview
The ZHB6718 is a bipolar junction transistor (BJT) H-bridge integrated circuit manufactured by Diodes Incorporated. It integrates two NPN and two PNP transistors within an SM-8 (SOT-223) package. The device supports a continuous collector current of 2.5A with a collector-emitter breakdown voltage exceeding 20V for the NPN section. Key electrical parameters include a maximum power dissipation of 1.25W, a thermal resistance from junction to ambient of 100°C/W, and an operating temperature range spanning -55°C to +150°C. The component meets AEC-Q101 automotive standards.
Feature Summary
- Integrated H-Bridge topology combining dual NPN and dual PNP transistors
- Qualified to AEC-Q101 standards for high reliability applications
- Low saturation voltage characteristics for efficient switching
- Lead-free finish compliant with RoHS directives
Applications
- Automotive motor control systems
- High-reliability industrial switching circuits
- DC motor driver implementations
Procurement Notes
Verify the specific ordering suffix TA against official Diodes Incorporated documentation to confirm reel packaging specifications. Ensure that the procurement channel is authorized to maintain compliance with AEC-Q101 quality requirements and warranty terms. Cross-reference the date code marking on received units with manufacturing records to validate authenticity and traceability.
Selection Notes
Select this component when a compact H-bridge solution is required for automotive or industrial environments. The SM-8 package provides adequate thermal performance for 2.5A continuous operation. Verify that the system's PCB copper area aligns with the datasheet's thermal derating curves to ensure safe operating area compliance under steady-state conditions.
Part Context
This part belongs to the ZHB series of bipolar transistor H-bridges designed by Diodes Incorporated. The series focuses on providing integrated switching solutions in space-constrained packages. The ZHB6718 specifically targets applications requiring robust performance under automotive-grade environmental stresses while maintaining low profile dimensions.
Replacement Considerations
Consult official Diodes Incorporated substitution guides for verified alternatives. Do not assume pin compatibility with other H-bridge families without verifying absolute maximum ratings and thermal characteristics.
