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The ZHB6790TA is a bipolar transistor H-bridge array manufactured by Diodes Incorporated, housed in an SM-8 surface-mount package. It integrates two NPN and two PNP transistors to facilitate bridge configurations. The device supports continuous collector currents of up to 2A with maximum collector-emitter voltages of ±40V for NPN and PNP sections respectively. Total power dissipation reaches 1.25W for single transistors and 2W for dual pairs at +25°C ambient temperature. Transition frequencies are rated at 100MHz for PNP and 150MHz for NPN devices.
Verify the exact ordering suffix against the manufacturer's current catalog before procurement. Confirm that the component meets all necessary automotive qualification standards if required for the application. Ensure compliance with RoHS3 specifications and check for any recent product change notices or end-of-life announcements prior to finalizing orders.
Evaluate thermal resistance values based on PCB copper area, as power dissipation capabilities vary significantly between full copper and minimal footprint layouts. Consider switching times and transition frequencies when designing for high-speed operation. Verify base drive requirements to ensure adequate saturation voltage performance under expected load conditions.
This component belongs to the ZHB6790 series of bipolar transistor H-bridges produced by Diodes Incorporated. It serves as a compact solution for driving loads in bridge configurations. The datasheet indicates it is not recommended for new designs; engineers should consult the manufacturer for updated alternatives or specific automotive-grade variants.
Consult Diodes Incorporated directly for approved replacement part numbers, as the datasheet explicitly states this component is not recommended for new designs. No public substitute part numbers are documented in the provided source material.