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Product Detailed Parameters
- Description：TRANS 2NPN/2PNP 70V 1A SM8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Transistor Type：2 NPN, 2 PNP (H-Bridge)
- Current - Collector (Ic) (Max)：1A
- Voltage - Collector Emitter Breakdown (Max)：70V
- Vce Saturation (Max) @ Ib, Ic：750mV @ 50mA, 2A
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：300 @ 100mA, 2V
- Power - Max：1.25W
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-223-8
- Supplier Device Package：SM8
- Grade：-
- Qualification：-
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Overview
The ZHB6792TC is a bipolar transistor H-bridge array manufactured by Diodes Incorporated, featuring two NPN and two PNP transistors in an SM-8 package. It supports up to 70V supply voltage with a continuous collector current rating of 1A. The device operates within a temperature range of -55°C to +150°C. Electrical characteristics include a transition frequency (fT) of 150MHz for NPNs and 100MHz for PNPs. Total power dissipation reaches 1.25W for single transistors and 2W for dual transistors at 25°C ambient temperature.
Feature Summary
- Compact surface-mount packaging designed for space-constrained applications
- Low on-state losses and low drive requirements for efficient operation
- Capable of operating with supply voltages up to 70V
Applications
- Automotive motor control circuits
- H-bridge driver implementations
- Power switching applications requiring compact form factors
Procurement Notes
Verify the specific suffix 'TC' against official documentation to confirm tape-and-reel packaging or specific quality certifications. Confirm component availability status as the datasheet indicates it is not recommended for new designs. Ensure compliance with RoHS3 standards and check for any recent production change notices affecting lead finish or internal structure.
Selection Notes
Evaluate thermal resistance values carefully, noting that dissipation drops significantly above 25°C ambient temperature. Compare saturation voltages and hFE ranges against load requirements to ensure adequate drive capability. Verify that the SM-8 package dimensions align with the target PCB footprint and soldering profile constraints.
Part Context
This component belongs to the ZHB6792 family of H-bridge arrays from Diodes Incorporated. It integrates complementary NPN and PNP pairs into a single monolithic structure. The device serves as a discrete alternative to integrated H-bridge ICs, offering flexibility in high-voltage and high-current configurations.
Replacement Considerations
Check for direct pin-compatible alternatives within the same manufacturer's portfolio. Verify if other packages like SOT-223 offer equivalent electrical performance. Ensure any substitute maintains the required 70V breakdown voltage and 1A current handling capabilities.
