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The ZMS2800TA is a silicon signal Schottky barrier diode manufactured by Diodes Incorporated, packaged in the SOD-323 surface mount format. It features a breakdown voltage of 70 V at 10 μA reverse current and a maximum forward current of 1 A for 1 μs pulses. The device exhibits a typical forward voltage of 410 mV at 1 mA and a capacitance of 1.2 pF at 0 V reverse bias. Power dissipation is rated at 250 mW at 25°C ambient temperature, with an operating junction temperature range from -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm tape and reel specifications or packaging variations. Ensure the component matches the exact electrical parameters required for the target circuit design before finalizing procurement orders.
Select this component for applications requiring fast switching speeds and low forward voltage drops in compact surface mount designs. Consider the 70 V breakdown voltage and 250 mW power dissipation limits when designing circuits to ensure operation within safe thermal and electrical boundaries.
This part belongs to the ZMS series of Schottky barrier diodes produced by Diodes Incorporated. The series includes variants such as the ZMS2811 and ZMS5800, which share similar packaging but differ in breakdown voltage ratings. These components are designed for high-frequency signal processing tasks.
Cross-reference with other SOD-323 Schottky diodes offering comparable 70 V breakdown voltage and low capacitance values. Verify pinout compatibility and thermal performance metrics to ensure seamless integration into existing PCB layouts without redesign.
The breakdown voltage is specified as 70 V when measured at a reverse current of 10 μA.
The maximum power dissipation is 250 mW when the ambient temperature is maintained at 25°C.
The typical forward voltage is 410 mV when tested at a forward current of 1 mA.