Single Bipolar Transistors ZTX1048ASTZ product image

ZTX1048ASTZ

$0.39
  • Description:TRANS NPN 17.5V 4A E-LINE
  • Series:-

SKU:74c77661af09 Category: Brand:

  
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ZTX1048ASTZ is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 17.5V 4A E-LINE. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for ZTX1048ASTZ

  • Description:TRANS NPN 17.5V 4A E-LINE
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):17.5 V
  • Vce Saturation (Max) @ Ib, Ic:245mV @ 20mA, 4A
  • Current - Collector Cutoff (Max):10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 1A, 2V
  • Power - Max:1 W
  • Frequency - Transition:150MHz
  • Operating Temperature:-55°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:E-Line-3, Formed Leads
  • Supplier Device Package:E-Line (TO-92 compatible)
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for ZTX1048ASTZ

ZTX1048ASTZ

Single Bipolar Transistors Overview

The ZTX1048ASTZ is an NPN silicon planar medium-power high-gain transistor manufactured by Diodes Incorporated. It features a collector-emitter voltage (VCEO) of 17.5 V and a continuous collector current rating of 4 A, with a peak pulse current capability of 20 A. The device operates within a temperature range of -55°C to +200°C and dissipates up to 1 W at 25°C ambient temperature. Packaged in the E-Line format, it offers low saturation voltages and high static forward current transfer ratios.

Single Bipolar Transistors Feature Summary

  • High gain characteristics suitable for amplification applications
  • Low saturation voltages for efficient power handling
  • Robust thermal performance supporting extended operating temperatures

Single Bipolar Transistors Applications

  • LCD backlight converters
  • Emergency lighting systems
  • DC-DC converters

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized Diodes Incorporated channels or certified distributors. Confirm datasheet revision DS33326 Rev. 4-3 matches the supplied documentation. Ensure the package type corresponds to the specified E-Line outline dimensions. Validate that the part meets all electrical parameters defined in the official specifications before integration into final designs.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring medium-power NPN switching with high gain. Evaluate thermal management requirements given the 1 W power dissipation limit. Consider the 4 A continuous current rating against load demands. Verify compatibility with control logic levels due to specific base-emitter turn-on voltage characteristics. Assess suitability for automotive environments if AEC-Q100 qualification is required.

Single Bipolar Transistors Part Context

This transistor belongs to the ZTX series of NPN silicon planar transistors designed for medium-power applications. It utilizes advanced planar technology to achieve high gain and low saturation voltages. The E-Line package provides a standardized footprint for surface-mount assembly, facilitating automated manufacturing processes in electronic equipment production lines.

Single Bipolar Transistors Replacement Considerations

Consult Diodes Incorporated for recommended substitutes as the ZTX1048A is not recommended for new designs. Verify pinout compatibility and electrical parameter overlaps before considering alternative components from other manufacturers.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (VCEO) is 17.5 V.

Does the ZTX1048ASTZ support automotive applications?

Yes, for automotive applications requiring specific change control, contact Diodes Incorporated directly regarding parts qualified to AEC-Q100/101/104/200 standards.

What is the transition frequency of the device?

The typical transition frequency (fT) is 150 MHz under conditions of IC = 50mA and VCE = 10V.

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