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Product Detailed Parameters
- Description：RF TRANS NPN 15V 1.3GHZ E-LINE
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：1.3GHz
- Noise Figure (dB Typ @ f)：5dB @ 500MHz
- Gain：53dB
- Power - Max：350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 2mA, 1V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-55°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：E-Line-3, Formed Leads
- Supplier Device Package：E-Line (TO-92 compatible)
- Grade：-
- Qualification：-
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Overview
The ZTX325STOA is an NPN silicon planar RF transistor manufactured by Diodes Incorporated. It features a transition frequency (fT) of up to 1.3 GHz at IC=25mA and VCE=5V, with a minimum of 1.0 GHz at IC=2mA. The device supports a collector-emitter voltage (VCEO) of 15 V and a collector-base voltage (VCBO) of 30 V. Maximum power dissipation is 350 mW at 25°C ambient temperature. It operates within a junction temperature range of -55°C to +200°C. The component utilizes an E-Line (TO-92 compatible) package.
Feature Summary
- High transition frequency capability for RF applications
- Low noise figure performance suitable for sensitive signal processing
- Robust thermal operating range extending to 200°C
Applications
- RF amplifier stages in communication equipment
- Low noise amplification circuits
- Intermodulation distortion critical signal processing
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm packaging configuration. Ensure the component matches the required electrical specifications for the target application. Confirm availability status as distribution channels may vary. Cross-reference datasheet issue dates for parameter accuracy.
Selection Notes
Select this component for designs requiring high-frequency operation up to 1.3 GHz with low noise characteristics. Consider the 350 mW power dissipation limit and thermal management requirements. Verify that the 15 V collector-emitter voltage rating aligns with circuit supply constraints. Evaluate the E-Line package suitability for the intended PCB layout.
Part Context
The ZTX325 belongs to the ZTX series of NPN silicon planar RF transistors produced by Diodes Incorporated. This series is engineered for radio frequency applications demanding high transition frequencies and low noise figures. The ZTX325 specifically targets high-performance RF amplification tasks within consumer and industrial electronics.
Replacement Considerations
Consult official manufacturer substitution guides for verified equivalent part numbers. Do not assume functional compatibility based solely on package or general category similarities without verifying electrical parameters.
FAQ
What is the maximum transition frequency specified for the ZTX325?
The maximum transition frequency (fT) is 1.3 GHz when measured at IC=25mA, VCE=5V, and f=400MHz.
What is the noise figure specification under standard test conditions?
The noise figure is typically 5.0 dB when measured at f=500MHz, VCE=5V, IC=2mA, with a source resistance of 50Ω.
What are the absolute maximum ratings for collector currents?
The mean collector current (IAV) averaged over 100μs is 25 mA, and the peak collector current (ICM) is 50 mA.
