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ZTX951 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS PNP 60V 4A E-LINE. Review the specifications below when checking this part for your BOM.
The ZTX951 is a PNP silicon planar medium power high current transistor manufactured by Diodes Incorporated. It features a continuous collector current of -4 A and supports peak currents up to -15 A. The device provides a collector-emitter breakdown voltage (VCEO) of -60 V, a collector-base breakdown voltage (VCBO) of -100 V, and an emitter-base breakdown voltage (VEBO) of -6 V. Power dissipation is rated at 1.2 W at 25°C ambient temperature, with a practical dissipation of 1.58 W on a standard PCB footprint. The transition frequency (fT) is specified at 120 MHz.
Verify the specific package configuration against your board layout requirements before ordering. Confirm that the thermal management strategy aligns with the junction-to-ambient resistance specifications provided in the datasheet. Ensure that operating conditions remain within the absolute maximum ratings to prevent device failure.
Select this component when a PNP transistor capable of handling significant continuous and peak currents is required. Consider the low saturation voltage for minimizing power loss in conduction states. Evaluate the thermal resistance parameters if the application involves sustained high-current loads or limited airflow conditions.
This part belongs to the ZTX series of bipolar junction transistors from Diodes Incorporated. It is designed as a medium power device suitable for general-purpose high current applications. The E-Line package offers TO-92 compatibility for easy integration into existing through-hole designs.
ZTX951STZ
The ZTX951 can handle a peak pulse current of -15 A.
The hFE ranges from 10 to 300 depending on the collector current, maintaining values between 75 and 200 at higher currents such as 1A and 4A.
The turn-on time is typically 82 ns and the turn-off time is typically 350 ns under specified test conditions.
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