ZV831BV2TA

Overview

The ZV831BV2TA is a single silicon hyperabrupt varactor diode from the 830 series, manufactured by Diodes Incorporated. It is housed in an SOD-523 surface-mount package and rated for a maximum reverse voltage of 25 V. The device provides a nominal capacitance of 15 pF at 2 V reverse bias (1 MHz) with a minimum Q factor of 300 at 3 V (50 MHz). It features a capacitance ratio of 6.0 (C2/C20) and low leakage current to ensure excellent phase noise performance. Operating temperatures range from -55°C to +150°C.

Feature Summary

• Hyperabrupt CV characteristics designed for frequency control and filtering applications
• Low reverse leakage current typically 200pA to minimize phase noise
• High Q factor and close tolerance capacitance values

Applications

• VCXO and TCXO circuits
• Wireless communications systems
• Mobile radio equipment

Procurement Notes

Verify component authenticity through authorized channels as this part may be obsolete or discontinued. Confirm RoHS3 compliance status and check for product change notices regarding manufacturing origin shifts. Ensure storage conditions meet ESD protection standards during handling.

Selection Notes

Select this component when steep tuning curves are required for oscillator stabilization. Compare against the 12V hyperabrupt range if higher breakdown voltages are needed. Verify that the SOD-523 footprint matches the PCB layout constraints and thermal dissipation requirements.

Part Context

This device belongs to the 830 series of silicon varactor diodes originally developed by Zetex Semiconductors plc. The series includes various capacitance grades such as 829 through 836. The ZV831 variant specifically targets applications requiring a nominal 15 pF capacitance with high tuning ratios.

Replacement Considerations

Public confirmed substitute part numbers: None identified.