Single Bipolar Transistors ZX5T853GTA product image

ZX5T853GTA

$1.23
  • Description:TRANS NPN 100V 6A SOT-223-3
  • Series:-

SKU:2c8b8da055c0 Category: Brand:

  
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ZX5T853GTA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 100V 6A SOT-223-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for ZX5T853GTA

  • Description:TRANS NPN 100V 6A SOT-223-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):6:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:220mV @ 500mA, 5A
  • Current - Collector Cutoff (Max):20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 2A, 2V
  • Power - Max:3 W
  • Frequency - Transition:130MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-261-4, TO-261AA
  • Supplier Device Package:SOT-223-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for ZX5T853GTA

ZX5T853GTA

Single Bipolar Transistors Overview

The ZX5T853GTA is an NPN medium power low saturation transistor manufactured by Diodes Incorporated. It features a collector-emitter voltage (VCEO) of 100 V and a continuous collector current (IC) of 6 A. The device supports a peak pulse current (ICM) of 10 A and offers a low saturation voltage (VCE(sat)) of less than 35 mV at 6 A, with an equivalent on-resistance (RSAT) of 36 mΩ. Packaged in a SOT-223 case, it operates within a temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • High gain hold up with hFE specified up to 10A
  • Qualified to AEC-Q101 standards for high reliability
  • Low saturation voltage for efficient switching performance

Single Bipolar Transistors Applications

  • Motor driving circuits
  • Line switching applications
  • High side switches

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'GTA' against official documentation to confirm reel size, tape width, and quantity per reel specifications. Ensure compliance requirements such as RoHS and halogen-free status are validated against the manufacturer's latest quality definitions before procurement.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high continuous collector current and low saturation voltage. Consider the thermal resistance characteristics and safe operating area limits when designing for high-power dissipation scenarios. Verify that the required gain meets the application needs across the full operating temperature range.

Single Bipolar Transistors Part Context

This part belongs to the ZX5T853 series of NPN medium power transistors. It is designed for general-purpose switching applications where low saturation voltage is critical. The complementary PNP type is the ZX5T953G. The device utilizes a molded plastic case with matte tin plated leads suitable for surface mount assembly.

Single Bipolar Transistors Replacement Considerations

The complementary PNP type ZX5T953G serves as a related device within the same series. Direct substitution requires verifying pinout compatibility and ensuring electrical parameters meet the specific circuit requirements.

Single Bipolar Transistors FAQ

What is the maximum peak pulse current rating?

The maximum peak pulse current (ICM) rating is 10 A.

Is the device qualified for automotive applications?

Yes, the device is qualified to AEC-Q101 standards for high reliability.

What is the typical transition frequency?

The typical transition frequency (fT) is 130 MHz at VCE = 10V and IC = 100mA.

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$1.23
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