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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 4.9A/4.1A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.9A, 4.1A
- Rds On (Max) @ Id, Vgs：35mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：796pF @ 25V
- Power - Max：1.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMC3A16DN8TC is a complementary N/P-channel enhancement mode MOSFET array in an SOIC-8 package. The N-channel device supports a drain-source voltage of 30V with a maximum on-resistance of 50mΩ at VGS=4.5V and ID=7.4A, delivering a continuous current of 6.4A. The P-channel counterpart features a -30V rating, a maximum on-resistance of 70mΩ at VGS=-4.5V and ID=-3.4A, and a continuous current of -5.4A. Both channels operate within a junction temperature range of -55°C to +150°C.
Feature Summary
- Utilizes Zetex trench technology for low on-resistance and fast switching speed
- Designed for low threshold operation and reduced gate drive requirements
- Integrated into a low profile surface-mount package
Applications
- Motor Drive circuits
- LCD backlighting power management
Procurement Notes
Verify the specific suffix TC against the manufacturer's ordering information to confirm the reel tape width and quantity per reel. Ensure the component matches the required SOIC-8 pinout and thermal characteristics for the target PCB layout. Cross-reference the datasheet issue date with the latest revision to confirm static and dynamic electrical parameters remain unchanged.
Selection Notes
Select this component for applications requiring a matched N/P-channel pair in a compact footprint. Evaluate the thermal resistance values based on the specific copper coverage and airflow conditions of the design. Confirm that the logic-level gate drive voltages align with the controller output levels to ensure full enhancement and minimal conduction losses.
Part Context
This part belongs to the ZXMC3A series of complementary MOSFETs manufactured by Diodes Incorporated under the Zetex brand. It represents a generation of trench MOSFETs designed to combine low on-resistance with high-speed switching capabilities for efficient power management solutions.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided documentation. When evaluating alternatives, verify that the replacement maintains the 30V rating, SOIC-8 package dimensions, and compatible RDS(on) thresholds for both N-channel and P-channel devices.
