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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 2.4A 8MSOP
- Series：-
- Mfr：Diodes Incorporated
- Package：Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：2.4A, 1.7A
- Rds On (Max) @ Id, Vgs：130mOhm @ 1.7A, 4.5V
- Vgs(th) (Max) @ Id：700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：350pF @ 15V
- Power - Max：1.04W
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package：8-MSOP
- Grade：-
- Qualification：-
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Overview
The ZXMD63C02XTA is a dual-channel enhancement mode MOSFET array from Diodes Incorporated, integrating one N-channel and one P-channel device within an 8-pin MSOP package. The N-channel component provides a drain-source breakdown voltage of 20 V with a maximum on-resistance of 0.15 Ω at a gate drive of 4.5 V. The P-channel counterpart offers a -20 V breakdown voltage and a maximum on-resistance of 0.40 Ω under identical conditions. Designed for low-voltage power management, the device supports continuous drain currents up to 2.4 A for the N-channel and -1.7 A for the P-channel.
Feature Summary
- Integrates complementary N-channel and P-channel enhancement mode transistors in a single compact surface-mount package.
- Optimized for high efficiency through low on-resistance characteristics suitable for low-voltage applications.
- Features fast switching speeds and low threshold voltages to facilitate efficient logic-level gate drive requirements.
Applications
- DC-DC converters
- Power management functions
- Disconnect switches
- Motor control
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. The 'TA' suffix indicates a reel size of 7 inches with a quantity of 1000 units per reel. Confirm that the required packaging format aligns with automated assembly equipment specifications. Ensure the component version matches the current revision status provided by the manufacturer.
Selection Notes
Select this component when a matched pair of N-channel and P-channel MOSFETs is required for synchronous rectification or bridge configurations. Evaluate thermal resistance parameters based on the specific PCB copper coverage and airflow conditions. Verify that the gate drive voltage levels are sufficient to achieve the specified low on-resistance values for both channels.
Part Context
This part belongs to the ZXMD63 series of high-density MOSFETs developed utilizing Zetex technology. The series focuses on combining low on-resistance with rapid switching capabilities. It serves as a solution for space-constrained designs requiring integrated dual-channel functionality in a low-profile SOIC-style package.
Replacement Considerations
No official substitute part numbers are documented in the source material. When evaluating alternatives, ensure compatibility regarding the 8-pin MSOP footprint, pinout configuration, and electrical ratings such as the 20 V breakdown voltage and on-resistance limits.
