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The ZXMN10A08DN8TC is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage (BVDSS) of 100 V and a maximum continuous drain current (ID) of 2.1 A at +25°C. The device exhibits a low on-resistance (RDS(on)) of 0.25 Ω at VGS = 10 V and 0.30 Ω at VGS = 6 V. It operates within a temperature range of -55°C to +150°C and utilizes an SO-8 surface-mount package.
Verify the specific ordering suffix against official documentation, as it dictates the reel size and packing quantity. Confirm that the component meets required environmental standards such as RoHS compliance and halogen-free specifications before finalizing procurement orders.
Select this component based on the 100V drain-source voltage rating and the 0.25Ω on-resistance requirement. Ensure the thermal design accommodates the specified power dissipation limits under the intended operating ambient temperature conditions.
This part belongs to the ZXMN10A series of trench MOSFETs from Diodes Incorporated. These devices are designed to combine low on-resistance with fast switching speeds, targeting high-efficiency power management applications in compact packages.
Consult the manufacturer's datasheet for a list of similar parts or direct replacements. Verify pinout compatibility and electrical parameters when considering alternative components.