ZXMN10A08DN8TC

ZXMN10A08DN8TC

$0.38
  • Description:MOSFET 2N-CH 100V 1.6A 8SO
  • Series:-

SKU:4a985756698e Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 100V 1.6A 8SO
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:1.6A
  • Rds On (Max) @ Id, Vgs:250mOhm @ 3.2A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs:7.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:405pF @ 50V
  • Power - Max:1.25W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

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ZXMN10A08DN8TC

Overview

The ZXMN10A08DN8TC is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage (BVDSS) of 100 V and a maximum continuous drain current (ID) of 2.1 A at +25°C. The device exhibits a low on-resistance (RDS(on)) of 0.25 Ω at VGS = 10 V and 0.30 Ω at VGS = 6 V. It operates within a temperature range of -55°C to +150°C and utilizes an SO-8 surface-mount package.

Feature Summary

  • Low on-resistance for high efficiency
  • Fast switching speed capabilities
  • Low threshold voltage and gate drive requirements
  • Totally lead-free and fully RoHS compliant

Applications

  • DC-DC converters
  • Power management functions
  • Disconnect switches
  • Motor controls

Procurement Notes

Verify the specific ordering suffix against official documentation, as it dictates the reel size and packing quantity. Confirm that the component meets required environmental standards such as RoHS compliance and halogen-free specifications before finalizing procurement orders.

Selection Notes

Select this component based on the 100V drain-source voltage rating and the 0.25Ω on-resistance requirement. Ensure the thermal design accommodates the specified power dissipation limits under the intended operating ambient temperature conditions.

Part Context

This part belongs to the ZXMN10A series of trench MOSFETs from Diodes Incorporated. These devices are designed to combine low on-resistance with fast switching speeds, targeting high-efficiency power management applications in compact packages.

Replacement Considerations

Consult the manufacturer's datasheet for a list of similar parts or direct replacements. Verify pinout compatibility and electrical parameters when considering alternative components.

ZXMN10A08DN8TCZXMN10A08DN8TC
$0.38
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