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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 4.9A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.9A
- Rds On (Max) @ Id, Vgs：35mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：796pF @ 25V
- Power - Max：1.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMN3A06DN8TA is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, packaged in an SO-8 surface-mount configuration. It features a maximum drain-source voltage of 30 V and a continuous drain current of 6.2 A at 25°C. The device exhibits a typical on-resistance of 0.035 Ω at VGS=10V and 0.050 Ω at VGS=4.5V. Operating within a junction temperature range of -55°C to +150°C, it includes two independent channels with integrated body diodes. Key dynamic parameters include a total gate charge of 9.2 nC at VGS=5V and a reverse recovery time of 17.8 ns for the source-drain diode.
Feature Summary
- Dual channel architecture with low on-resistance and fast switching speed
- Low threshold voltage enabling efficient low gate drive operation
- Integrated body diodes with optimized reverse recovery characteristics
Applications
- DC-DC converters
- Power management functions
- Disconnect switches
- Motor control
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging format. The TA suffix indicates a reel quantity of 500 units in 12mm tape width. Confirm that the component meets required RoHS compliance standards before integration into final assemblies.
Selection Notes
Select this component for applications requiring compact dual-channel solutions with low conduction losses. Ensure the PCB layout supports adequate thermal dissipation, as power ratings vary significantly based on copper coverage and airflow conditions during operation.
Part Context
This part belongs to the ZXMN3A series of Trench MOSFETs designed by Zetex, now part of Diodes Incorporated. The series emphasizes high efficiency in low-voltage power management through unique structural designs that balance low resistance with rapid switching capabilities.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided datasheet. Evaluate alternatives based on matching 30V rating, dual-channel configuration, and comparable RDS(on) values within the SO-8 package footprint.
