ZXMN6A11DN8TA

$1.09

Description：MOSFET 2N-CH 60V 2.5A 8SO
Series：-

SKU:69264ebf3a68 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 2.5A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：2.5A
Rds On (Max) @ Id, Vgs：120mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：5.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：330pF @ 40V
Power - Max：1.8W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

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ZXMN6A11DN8TA

Overview

The ZXMN6A11DN8TA is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device offers a static drain-source on-resistance (RDS(ON)) of 120mΩ at VGS=10V and 180mΩ at VGS=4.5V. Continuous drain current (ID) reaches 3.2A at VGS=10V and +25°C, or 2.6A at +70°C. Total gate charge (Qg) is 5.7nC at VGS=10V. Operating temperature range spans from -55°C to +150°C.

Feature Summary

Dual N-channel configuration in an SO-8 package
Low on-resistance for high efficiency power management
Fast switching speed with low threshold voltage
Qualified to AEC-Q101 standards for automotive reliability

Applications

DC-DC Converters
Power Management Functions
Motor Control

Procurement Notes

Verify the specific ordering suffix 'DN8TA' corresponds to the 2,500-unit tape and reel packaging format as defined in the manufacturer's documentation. Confirm compliance requirements such as RoHS 3 and halogen-free status directly against the latest datasheet revision DS33555 Rev. 5 before finalizing procurement specifications.

Selection Notes

Select this component when a dual N-channel topology is required within an SO-8 footprint. Ensure the application operates within the specified 60V drain-source voltage limit and that thermal dissipation constraints align with the provided RθJA values for the target PCB copper coverage conditions.

Part Context

This part belongs to the ZXMN6A11 series of trench MOSFETs designed for low on-state resistance and superior switching performance. It serves as a surface-mount solution for applications demanding efficient power handling in compact form factors, specifically targeting modern power management architectures.

Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify pin compatibility, electrical ratings, and package dimensions to ensure functional equivalence without modifying the existing circuit layout.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.