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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 3.8A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：3.8A
- Rds On (Max) @ Id, Vgs：50mOhm @ 3.6A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：20.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1063pF @ 30V
- Power - Max：1.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMN6A25DN8TA is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated, originally designed by Zetex Semiconductors. It utilizes trench technology to achieve low on-resistance and fast switching speeds within a low-profile SO-8 package. The device features a drain-source voltage rating of 60V and a continuous drain current of 5A at 25°C. Static drain-source on-state resistance is specified as 50 milliohms at VGS=10V and 70 milliohms at VGS=4.5V. The component operates within a temperature range of -55°C to +150°C and includes built-in body diodes for each channel.
Feature Summary
- Dual configuration with two independent N-channel enhancement mode MOSFETs in a single package
- Trench structure design providing low on-resistance and fast switching capabilities
- Low gate drive requirements suitable for high efficiency power management applications
Applications
- DC-DC converters
- Power management functions
- Motor control
Procurement Notes
Verify the specific ordering suffix TA against the manufacturer's current catalog to confirm availability and packaging specifications. Confirm RoHS compliance status and check for any product change notifications or obsolescence warnings from Diodes Incorporated before finalizing procurement plans.
Selection Notes
Select this component for designs requiring dual N-channel switching in a compact surface-mount footprint. Ensure the application voltage does not exceed the 60V drain-source breakdown rating. Verify that the gate drive voltage meets the threshold requirements for the desired on-state resistance level.
Part Context
This part belongs to the ZXMN6A series of dual N-channel MOSFETs. It shares the same core die and electrical characteristics as the ZXMN6A25DN8, differing primarily in the tape and reel packaging format indicated by the TA suffix. The device is part of the broader portfolio of trench MOSFETs optimized for power management.
Replacement Considerations
The ZXMN6A25DN8TC serves as a direct functional equivalent with identical electrical parameters but differs in packaging quantity. Cross-referencing with other dual N-channel 60V MOSFETs in SO-8 packages requires verification of pinout compatibility and thermal resistance values.
