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Product Detailed Parameters
- Description：TRANS NPN/PNP 15V/12V WDFN3020-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP
- Current - Collector (Ic) (Max)：4.5A, 4A
- Voltage - Collector Emitter Breakdown (Max)：15V, 12V
- Vce Saturation (Max) @ Ib, Ic：310mV @ 50mA, 4.5A / 310mV @ 150mA, 4A
- Current - Collector Cutoff (Max)：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：300 @ 200mA, 2V / 300 @ 100mA, 2V
- Power - Max：1.7W
- Frequency - Transition：120MHz, 110MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-WDFN Exposed Pad
- Supplier Device Package：W-DFN3020-8
- Grade：-
- Qualification：-
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Overview
The ZXTC6717MCTA is a complementary dual bipolar junction transistor (BJT) array manufactured by Diodes Incorporated. It integrates an NPN and a PNP transistor within a single W-DFN3020-8 Type B package, measuring 3.0mm x 2.0mm with a nominal height of 0.8mm. The NPN die supports a continuous collector current of 4.5A with a collector-emitter breakdown voltage exceeding 15V. The PNP die provides a continuous collector current of -4A with a breakdown voltage exceeding -12V. Both transistors are characterized for high current gain up to 12A and feature low saturation voltages.
Feature Summary
- Complementary NPN/PNP configuration in a compact surface-mount footprint
- Low saturation voltage characteristics for efficient power switching
- High current gain maintained at elevated collector currents
- Qualified to AEC-Q101 standards for automotive reliability
Applications
- DC-DC converters
- Charging circuits
- Power switches
- Motor control systems
- LED backlighting circuits
Procurement Notes
Verify the specific ordering suffix 'MCTA' against the manufacturer's official documentation to confirm packaging details and reel specifications. Ensure that the component meets RoHS compliance requirements and matches the intended thermal management strategy for the target PCB layout.
Selection Notes
Select this component when space constraints require a small footprint relative to traditional SOT-26 packages. Evaluate the thermal resistance parameters based on the copper area available on the printed circuit board. Confirm that the required collector current and voltage ratings align with the specific NPN and PNP capabilities provided in the datasheet.
Part Context
This device belongs to the ZXTC6717MC product line from Diodes Incorporated. It serves as a high-performance alternative to larger discrete transistor pairs or standard dual transistor packages. The integrated design reduces board space and simplifies assembly for applications requiring matched complementary switching elements.
Replacement Considerations
ZXTC6717MCQTA
FAQ
What is the maximum collector-emitter saturation voltage for the NPN transistor?
The maximum collector-emitter saturation voltage is 100mV at a collector current of 1A.
How does the footprint size compare to SOT-26 packages?
The 6mm² footprint is 50% smaller than TSOP6 and SOT26 packages.
Is the device suitable for automotive applications?
Yes, the device is qualified to AEC-Q101 standards for high reliability.
