ZXTD09N50DE6TC

Overview

The ZXTD09N50DE6TC is a dual NPN bipolar junction transistor array manufactured by Diodes Incorporated. It features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 1A. The device exhibits a low saturation voltage of 270mV at 50mA base and 1A collector current, with a minimum DC current gain of 200 at 500mA. Operating within a temperature range of -55°C to 150°C, it utilizes an SOT-23-6 package for surface mount applications.

Feature Summary

• Dual NPN configuration in a compact SOT-26 package
• Low saturation voltage for efficient switching performance
• High DC current gain for signal amplification

Applications

• General purpose signal switching
• Low voltage amplifier circuits
• Digital logic interface stages

Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm pinout compatibility and electrical tolerances. Ensure the component meets RoHS3 standards if required by the target assembly process. Cross-reference datasheet revisions to validate parameter consistency before finalizing procurement specifications.

Selection Notes

Select this component when a dual NPN configuration is required in a small footprint. The 50V rating suits low-voltage digital systems. Evaluate thermal management requirements given the 1.1W power dissipation limit in the SOT-26 package. Confirm that the 270mV saturation voltage meets the specific circuit efficiency targets.

Part Context

This part belongs to the ZXTD series of dual transistors from Diodes Incorporated. It serves as a compact alternative to discrete single transistors, saving board space in dense designs. The SOT-26 package allows for automated surface mount placement, supporting high-volume manufacturing processes.

Replacement Considerations

ZTD09N50DE6QTA is listed as a parameter-equivalent substitute.