ZXTD1M832TA

ZXTD1M832TA

$0.28
  • Description:TRANS 2PNP 12V 4A 8-MLP
  • Series:-

SKU:e8d702fa2aa7 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP 12V 4A 8-MLP
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):4A
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 150mA, 4A
  • Current - Collector Cutoff (Max):25nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 2.5A, 2V
  • Power - Max:1.7W
  • Frequency - Transition:110MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-VDFN Exposed Pad
  • Supplier Device Package:8-MLP (3x2)
  • Grade:-
  • Qualification:-

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ZXTD1M832TA

Overview

The ZXTD1M832TA is a dual PNP low saturation switching transistor from Diodes Incorporated, packaged in a 3mm x 2mm MLP outline. It features a collector-emitter voltage (VCEO) of -12V and a continuous collector current (IC) of -4A. The device exhibits extremely low saturation voltage, reaching -140mV at -1A. Electrical characteristics include a transition frequency (fT) of 110MHz and an output capacitance (Cobo) of 30pF. Operating and storage temperature ranges span from -55°C to +150°C.

Feature Summary

  • Dual die configuration housed in a compact 3mm x 2mm Micro Leaded Package for space-constrained designs.
  • Extremely low on-state losses with saturation voltages as low as -140mV at -1A collector current.
  • High static forward current transfer ratio (hFE) characterized up to -10A for robust driving capability.
  • Low package height of approximately 0.9mm to facilitate surface mount applications.

Applications

  • DC-DC converters and FET drivers
  • Charging circuits
  • Power switches
  • Motor control

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm reel specifications. The 'TA' suffix indicates a tape and reel quantity of 3000 units on an 8mm reel width. Confirm that the component matches the required MLP832 package dimensions and thermal resistance values for your PCB layout before finalizing procurement.

Selection Notes

Select this component when high efficiency and low saturation voltage are critical for power management functions. Ensure the design accommodates the -12V VCEO rating and -4A continuous current limits. Consider the thermal resistance requirements based on the copper area and board thickness used in the application to maintain junction temperatures within the specified operating range.

Part Context

This part belongs to the fourth generation of low saturation dual transistors designed by Diodes Incorporated. It utilizes the MPPS Miniature Package Power Solutions technology to deliver performance equivalent to larger packages while reducing PCB area and component count. The dual die structure allows for independent or combined operation in various switching topologies.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings if considering alternative manufacturers for the MLP832 package form factor.

FAQ

What is the maximum continuous collector current for the ZXTD1M832?

The maximum continuous collector current (IC) is rated at -4A under standard conditions.

What is the saturation voltage at a collector current of -1A?

The typical collector-emitter saturation voltage (VCE(sat)) is -140mV when the collector current is -1A and base current is -10mA.

What is the operating temperature range for this device?

The operating and storage temperature range (Tj:Tstg) is from -55°C to +150°C.

ZXTD1M832TAZXTD1M832TA
$0.28
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