SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The ZXTD4591E6 is a complementary medium power transistor pair in an SOT26 package. It integrates one NPN and one PNP transistor, each rated for a continuous collector current of 1A. The NPN device offers a collector-emitter breakdown voltage exceeding 60V with a maximum saturation voltage of 500mV at 1A. The PNP counterpart provides a breakdown voltage greater than -60V and a maximum saturation voltage of -600mV at -1A. Both transistors are characterized for DC current gain up to 2A. The component operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix required for tape and reel quantities against manufacturer documentation before procurement. Confirm that the selected variant meets all necessary environmental compliance requirements for the target application. Ensure proper handling procedures are followed during assembly due to the surface-mount nature of the SOT26 package.
Select this component when a matched complementary pair is required for driving external power switches or controlling motor loads. The integrated design reduces board space compared to discrete solutions. Verify that the thermal resistance and power dissipation capabilities align with the expected operating conditions and PCB layout constraints.
This part belongs to the Zetex complementary transistor family from Diodes Incorporated. It is designed as a drop-in replacement for similar dual-transistor configurations in power management and motor control circuits. The SOT26 package allows for automated assembly while maintaining performance levels suitable for medium-power switching tasks.
Consult official cross-reference tools for parametrically equivalent parts. Verify pinout compatibility and electrical specifications such as breakdown voltage and current ratings before substitution.
Both the NPN and PNP transistors support a continuous collector current of 1A.
Yes, the ZXTD4591E6 is qualified to AEC-Q101 standards for high reliability.
The NPN transistor has a BVCEO greater than 60V, and the PNP transistor has a BVCEO greater than -60V.