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The ZXTD617MCTA is a dual NPN low saturation transistor from Diodes Incorporated, housed in a W-DFN3020-8 package. It features a collector-emitter voltage (BVCEO) exceeding 15V and supports a continuous collector current of 4.5A per die. The device achieves a maximum saturation voltage of 100mV at 1A input, with an equivalent on-resistance (RSAT) of 45mΩ. Static forward current transfer ratio (hFE) is specified up to 12A for high gain hold-up capabilities. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix against official distributor catalogs to ensure correct reel size and tape width specifications. Confirm that the procurement channel is authorized by Diodes Incorporated to guarantee product authenticity and adherence to standard terms of sale. Cross-reference the marking code DAA with the latest datasheet revision DS31930 Rev. 4-2 to validate the component identity upon receipt.
Select this component when space constraints require a compact dual NPN solution with high current handling capabilities. The W-DFN3020-8 package offers a 50% smaller footprint than TSOT26 and SOT26 alternatives. Evaluate thermal performance based on the specific PCB copper area and layer configuration, as power dissipation varies significantly between single-sided and multi-layer layouts.
This part belongs to the ZXTD series of complementary and dual low saturation transistors manufactured by Diodes Incorporated. The series focuses on providing high current gain and low on-resistance in miniature surface-mount packages suitable for modern portable electronics. The ZXTD617MC variant specifically utilizes the W-DFN3020-8 form factor to maximize thermal efficiency within a constrained board area.
Direct replacements include other dual NPN transistors in the W-DFN3020-8 package with matching BVCEO and IC ratings. Verify pinout compatibility and thermal resistance characteristics before substitution. Single NPN equivalents require two units and additional board space.