ZXTD717MCTA

Overview

The ZXTD717MCTA is a dual PNP low saturation transistor manufactured by Diodes Incorporated, housed in a W-DFN3020-8 package. It features a collector-emitter breakdown voltage (BVCEO) of -12V and supports a continuous collector current (IC) of -4A. The device achieves a low saturation voltage of -140mV at -1A and an equivalent on-resistance (RSAT) of 60mΩ. Static forward current transfer ratio (hFE) is specified up to -10A. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Dual NPN configuration saving footprint and component count
• Low profile 0.8mm high package for thin applications
• Totally lead-free and fully RoHS compliant

Applications

• DC-DC converters
• Charging circuits
• Power switches
• Motor drives

Procurement Notes

Verify the exact ordering part number against official Diodes Incorporated documentation before purchase. Confirm that the specific reel size and tape width match your automated assembly equipment requirements. Ensure compliance with applicable environmental directives such as RoHS 3 when sourcing this component.

Selection Notes

Select this component for designs requiring compact dual PNP transistors with low saturation characteristics. Evaluate thermal resistance values based on the specific PCB copper area and layer configuration used in your layout. Consider the operating temperature range and power dissipation limits under steady-state conditions.

Part Context

This component belongs to the ZXTD series of dual transistors offered by Diodes Incorporated. It utilizes a W-DFN3020-8 package which provides a smaller footprint compared to traditional SOT packages while maintaining efficient thermal performance through exposed collector pads.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-reference pinouts, electrical parameters, and package dimensions carefully before replacing existing components in established designs.