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ZXTP2008ZTA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS PNP 30V 5.5A SOT-89-3. Review the specifications below when checking this part for your BOM.
The ZXTP2008ZTA is a PNP low saturation medium power transistor manufactured by Diodes Incorporated. It features a collector-emitter voltage (VCEO) of -30 V and a continuous collector current (IC) of -5.5 A. The device exhibits a maximum collector-base voltage (VCBO) of -50 V and an emitter-base voltage (VEBO) of -7 V. Peak pulse current (ICM) reaches -20 A. Power dissipation (PD) is rated at 12 W with a linear derating factor of 12 mW/°C. Thermal resistance from junction to ambient (RθJA) is 83 °C/W, while junction-to-lead (RθJL) is 3.23 °C/W. Operating temperature range spans from -55 °C to +150 °C.
Verify the specific ordering suffix ZTA against official Diodes Incorporated documentation to confirm reel size and tape width specifications. Ensure compliance with RoHS directives and halogen-free requirements as defined in the manufacturer's quality definitions. Confirm that the SOT89 package dimensions match your PCB footprint layout before finalizing procurement.
Select this component when low saturation voltage and high gain linearity are critical for efficiency. The SOT89 package provides adequate thermal performance for medium power applications. Verify that the -30 V collector-emitter rating meets the circuit's maximum voltage requirements. Consider the transition frequency and switching times if high-speed operation is required.
The ZXTP2008Z belongs to the ZXTP2008 series of PNP low saturation transistors. It is designed for applications requiring high efficiency and robust performance. The device utilizes a molded plastic case with matte tin plated leads. It is suitable for surface mount assembly on standard FR-4 PCBs.
No publicly confirmed substitute part numbers are documented in the provided datasheet.
The maximum peak pulse current (ICM) is -20 A.
Yes, the device is qualified to AEC-Q101 standards for high reliability.
The thermal resistance from junction to lead (RθJL) is 3.23 °C/W.
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