Single Bipolar Transistors ZXTP2012ASTZ product image

ZXTP2012ASTZ

$1.54
  • Description:TRANS PNP 60V 3.5A E-LINE
  • Series:-

SKU:f0970f63a4c7 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

ZXTP2012ASTZ is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS PNP 60V 3.5A E-LINE. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for ZXTP2012ASTZ

  • Description:TRANS PNP 60V 3.5A E-LINE
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Cut Tape (CT),Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):3.5 A
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:210mV @ 400mA, 4A
  • Current - Collector Cutoff (Max):20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1A, 1V
  • Power - Max:1 W
  • Frequency - Transition:120MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:E-Line-3, Formed Leads
  • Supplier Device Package:E-Line (TO-92 compatible)
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for ZXTP2012ASTZ

ZXTP2012ASTZ

Single Bipolar Transistors Overview

The ZXTP2012ASTZ is a PNP low-saturation medium-power transistor from Diodes Incorporated, packaged in the E-Line outline. It features a collector-emitter breakdown voltage (BVCEO) of -60V and supports a continuous collector current (IC) of -3.5A with peak currents up to -15A. The device exhibits an on-state resistance (RSAT) of 38mΩ and a maximum saturation voltage (VCE(sat)) of -145mV at -4A. Operating within a temperature range of -55°C to 150°C, it is supplied in cartons of 2,000 units.

Single Bipolar Transistors Feature Summary

  • Offers extremely low on-state losses suitable for DC-DC circuits
  • Maintains excellent gain performance up to 10 Amps
  • Features very low saturation voltage characteristics
  • Packaged in the E-Line outline for specific automotive applications

Single Bipolar Transistors Applications

  • DC-DC converters
  • MOSFET gate drivers
  • Power switches
  • Motor control

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix 'Z' corresponds to the carton packing format rather than reel packaging. Confirm compliance with AEC-Q100/101/104/200 standards if automotive qualification is required. Ensure design compatibility with the E-Line package dimensions and thermal resistance values specified in the datasheet.

Single Bipolar Transistors Selection Notes

Select this component when low saturation voltage and high current handling are critical for power management efficiency. Consider the E-Line package constraints and thermal dissipation requirements relative to the application environment. Verify suitability against the manufacturer's recommendation regarding new designs.

Single Bipolar Transistors Part Context

This part belongs to the ZXTP2012A series of PNP transistors designed for medium-power applications. It serves as a complement to NPN types like the ZXTN2010Z. The E-Line packaging distinguishes it from standard SOT-89 variants while maintaining similar electrical performance profiles for driving and switching functions.

Single Bipolar Transistors Replacement Considerations

Consult Diodes Incorporated for direct substitutes or updated design recommendations due to the manufacturer's notice that the ZXTP2012A is not recommended for new designs.

ZXTP2012ASTZZXTP2012ASTZ
$1.54
Buy Now