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The ZXTP56020FDBQ-7 is a dual PNP low VCE(sat) transistor manufactured by Diodes Incorporated. It features a collector-emitter voltage (VCEO) of -20V and a continuous collector current (IC) of -2A per channel. The device provides an equivalent on-resistance (RCE(SAT)) of 100mΩ and a saturation voltage below -150mV at -1A. Packaged in a U-DFN2020-6 (SWP) Type A case with sidewall tin plating, it supports power dissipation up to 2.47W under specific thermal conditions. The component operates within a temperature range of -55°C to +150°C and meets AEC-Q101 automotive standards.
Verify the part number suffix '-7' corresponds to the standard reel packaging containing 3,000 units per 7-inch tape. Confirm that the 'FDBQ' designation aligns with the specified U-DFN2020-6 (SWP) Type A package featuring sidewall plating. Ensure compliance requirements match the datasheet's declaration of being totally lead-free, fully RoHS compliant, and halogen/antimony free.
Select this component when a compact dual PNP solution with high current handling capability is required. The low VCE(sat) characteristic makes it suitable for applications demanding minimal power loss during conduction. Consider the U-DFN2020-6 package dimensions and the exposed pad thermal requirements for proper heat dissipation in the target design.
This component belongs to Diodes Incorporated's portfolio of bipolar junction transistors optimized for modern electronic designs. The ZXTP series focuses on delivering high performance in small form factors, addressing the industry trend toward miniaturization while maintaining robust electrical characteristics for power-intensive tasks.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and thermal resistance values if considering alternative manufacturers' dual PNP transistors.