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Product Detailed Parameters
- Description：N60V,RD(MAX)<100M@10V,RD(MAX)<12
- Series：TrenchFET®
- Mfr：Goford Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：80mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：458 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.7W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The 03N06L is an N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a drain-source voltage of 60V and a continuous drain current of 3A at 25°C case temperature. Maximum on-resistance is specified as 95mΩ at VGS=10V and 100mΩ at VGS=4.5V, both tested at ID=2A. Total gate charge is typically 15nC at VDD=30V and ID=2A. The component operates within a junction temperature range of -55°C to 150°C and is housed in a SOT-23-3 package.
Feature Summary
- Advanced trench technology for optimized conduction and switching performance
- 100% avalanche tested for enhanced reliability under transient conditions
- RoHS compliant manufacturing process
Applications
- Power switch circuits
- DC/DC converters
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details, such as reel quantities or tape specifications. Ensure that the requested part number matches the exact electrical ratings and thermal characteristics required for the target application environment. Cross-reference datasheet revision numbers to guarantee parameter consistency.
Selection Notes
Select this component based on its 60V rating and 3A continuous current capability within the SOT-23-3 footprint. Evaluate the thermal resistance and power dissipation limits relative to the expected operating case temperature. Consider the gate charge requirements for driving efficiency in high-frequency switching applications compared to alternative packages.
Part Context
This component belongs to the Goford Semiconductor lineup of N-channel enhancement mode power MOSFETs. These devices are engineered using trench technology to deliver low on-resistance and fast switching speeds. The product line targets general-purpose power management solutions requiring compact surface-mount packaging.
Replacement Considerations
Consult official substitution lists from Goford Semiconductor for verified equivalent parts. Verify pinout compatibility and ensure replacement components meet or exceed the original 60V breakdown voltage and 3A current ratings.
FAQ
What is the maximum pulsed drain current for the 03N06L?
The maximum pulsed drain current (IDM) is 12A.
Is the 03N06L suitable for high-voltage automotive applications?
The provided datasheet does not specify automotive qualification standards; it is documented for general power switch and DC/DC converter applications.
