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Product Detailed Parameters
- Description：N100V,RD(MAX)<250M@10V,RD(MAX)<2
- Series：-
- Mfr：Goford Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：2A
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：250mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：387 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The Goford Semiconductor 1002 is a single N-channel enhancement mode MOSFET designed for surface-mount applications. It features a maximum drain-source voltage of 100V and supports a continuous drain current of 2A at 25°C. The device utilizes a SOT-23-3 package with a maximum power dissipation of 1.3W. Key electrical characteristics include a gate-source threshold voltage of 3V at 250µA, a maximum gate-source voltage of ±20V, and an input capacitance of 387pF at 10V. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- N-channel enhancement mode construction for switching applications
- Surface-mount design in a compact SOT-23-3 package
- High breakdown voltage capability up to 100V
- Wide operating junction temperature range
Applications
- Low-power DC-DC converter circuits
- Load switching for portable devices
- Battery protection circuits
- General-purpose low-side switching
Procurement Notes
Verify the specific ordering suffix to confirm packaging type, as standard variations may exist between tape-and-reel and cut-tray formats. Confirm RoHS compliance status and moisture sensitivity level (MSL 3) requirements against your assembly process specifications. Ensure the component designation matches the exact manufacturer part number to avoid confusion with similar series items.
Selection Notes
Select this component when a small-footprint N-channel MOSFET is required for low-current applications up to 2A. The 100V rating provides sufficient headroom for 48V systems or higher voltage rails. Consider the thermal constraints of the SOT-23-3 package, which limits power dissipation to 1.3W, making it suitable for intermittent duty cycles or low average power loads rather than high-current continuous operation.
Part Context
This part belongs to Goford Semiconductor's discrete transistor portfolio, specifically within their metal-oxide-semiconductor field-effect transistor lineup. The company focuses on power semiconductor components, including MOSFETs for various industrial and consumer electronics markets. This specific model represents a standard single FET configuration intended for cost-sensitive and space-constrained designs.
Replacement Considerations
The G1002 is listed as a similar alternative by the manufacturer. Verify pinout compatibility and electrical parameter equivalence before substitution. No direct cross-manufacturer equivalents are confirmed in the provided documentation.
