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The 1004MP is a common base transistor designed for pulsed avionics amplifier applications, delivering 4 Watts of RF output power within the 960 to 1215 MHz frequency band. It features gold metalization and low thermal resistance packaging to ensure high reliability and ruggedness. Key electrical parameters include a maximum collector-to-base voltage of 50 V, a maximum collector current of 300 mA, and a maximum junction temperature of +200°C. The device provides a typical power gain of 9.0 dB at 1090 MHz with a 35 V supply.
Verify the manufacturer origin carefully, as datasheet text references Advanced Power Technology while the prompt specifies Microsemi Corporation. Confirm the specific package outline number (55FW-1) matches your mechanical constraints. Ensure that the component meets all required avionics qualification standards before integration into safety-critical systems.
Select this component when designing pulsed RF amplifiers requiring operation between 960 and 1215 MHz. Consider the 50 V collector-to-base voltage rating and the 300 mA maximum collector current limit during circuit design. Verify that the thermal management solution can handle the 7 W dissipation capability and maintain the junction temperature below +200°C under peak load conditions.
This component belongs to the class of discrete semiconductor transistors utilized in high-frequency radio frequency circuits. It serves as an active element for power amplification in specialized communication and navigation equipment operating within the L-band spectrum.
No verified replacement part numbers are available in the provided documentation.