100N03A

$0.53

Description：TO-252 MOSFETS ROHS
Series：UMW
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4d2044690615 Category: Single FETs, MOSFETs Brand: UMW

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Product introduction

Product Detailed Parameters

Description：TO-252 MOSFETS ROHS
Series：UMW
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1963 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：105W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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100N03A

Overview

The UMW 100N03A is a 30V N-channel enhancement mode power MOSFET utilizing advanced trench technology. It features a maximum continuous drain current of 90A at 25°C and a pulsed drain current of 200A. The device offers low on-resistance, typically 3.8mΩ at VGS=10V and 6.4mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage range of 1.0V to 2.5V, total gate charge of 41nC at 10V, and a junction-to-case thermal resistance of 3.3°C/W. It operates within a temperature range of -55°C to +150°C.

Feature Summary

Advanced trench technology design for excellent Rdson and low gate charge
Low on-resistance characteristics
Fast switching capability
Low reverse transfer capacitances

Applications

DC-DC converters
Synchronous rectifier

Procurement Notes

Verify the component marking matches 'UMW' and '100N03A'. Confirm the package type is TO-252. Ensure the datasheet aligns with RoHS standards. Check absolute maximum ratings against circuit requirements. Validate thermal performance under actual operating conditions.

Selection Notes

Select based on required drain-source voltage and current handling capabilities. Consider thermal resistance for heat dissipation needs. Evaluate gate charge for switching speed requirements. Verify compatibility with control logic voltage levels.

Part Context

This component belongs to the UMW N-channel power MOSFET family designed for high-efficiency power switching applications. It is manufactured by UMW (友台半导体有限公司) using trench technology to achieve low on-resistance and fast switching speeds suitable for modern power management circuits.

Replacement Considerations

Check pinout compatibility and package dimensions. Verify voltage and current ratings meet or exceed original specifications. Compare thermal resistance and gate charge values. Ensure switching characteristics are suitable for the target application frequency.