10N65F

$1.20

Description：MOSFET N-CH 650V 10A TO220F
Series：-
Mfr：EVVO
Package：Tube

SKU:4319cee2a902 Category: Single FETs, MOSFETs Brand: EVVO

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 650V 10A TO220F
Series：-
Mfr：EVVO
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.2Ohm @ 5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1037 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：50W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：ITO-220AB
Package / Case：TO-220-3 Full Pack, Isolated Tab

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10N65F

Overview

The EVVO 10N65F is a silicon N-channel enhancement mode VDMOSFET utilizing self-aligned planar technology to reduce conduction loss and improve switching performance. It features a 650V drain-source voltage rating and a continuous drain current of 10A. The device offers a maximum on-resistance of 0.9Ω at VGS=10V, with a typical value of 0.75Ω. Key electrical parameters include a total gate charge of 19nC, single pulse avalanche energy of 426mJ, and repetitive avalanche energy of 41mJ. Thermal resistance from junction-to-case is 4.46°C/W, while junction-to-ambient is 46.7°C/W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Self-aligned planar technology reduces conduction loss and enhances avalanche energy capability.
High dv/dt capability and fast switching performance suitable for system miniaturization.
Built-in body diode provides stable freewheeling performance for hard-switching circuits.
Insulated TO-220F package eliminates the need for additional thermal pads during assembly.

Applications

Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC) circuits
General purpose power switching applications

Procurement Notes

Verify the specific ordering suffix against official documentation, as variations such as IP may indicate package or tape-and-reel configurations. Confirm RoHS compliance status directly with the manufacturer or authorized distributor lists. Ensure the component matches the required thermal and electrical specifications for the target application before procurement.

Selection Notes

Select this component for high-voltage applications requiring low on-resistance and robust avalanche ruggedness. The 650V rating supports primary-side switching in offline converters. Consider the thermal resistance values when designing heatsinking solutions. The integrated body diode characteristics should be evaluated for synchronous rectification or flyback topologies.

Part Context

This part belongs to the family of 650V N-channel power MOSFETs designed for medium-power switching applications. It utilizes planar DMOS technology common in modern power semiconductors to balance conduction losses with switching speed. The device is intended to replace older generation MOSFETs in AC-DC adapters, chargers, and industrial power supplies where efficiency and reliability are critical.

Replacement Considerations

Cross-reference pinouts and thermal characteristics when substituting. Verify that alternative parts meet the 650V breakdown and 10A current requirements. Check if the replacement offers comparable avalanche energy ratings for robust operation in inductive load scenarios.