1214-370M

Overview

The 1214-370M is an internally matched, common base NPN RF bipolar transistor designed for pulsed radar applications within the 1200 to 1400 MHz frequency range. It delivers 370 watts of pulsed RF output power with a maximum collector voltage of 50 volts and a peak current rating of 25 amperes. The device utilizes a 55ST chassis mount package configuration. Key operational parameters include a pulse width of 330 microseconds and a duty cycle of 10 percent, ensuring reliable performance in high-power transmission environments.

Feature Summary

• Internally matched design simplifies circuit integration by eliminating external matching networks
• Common base configuration provides stable high-frequency operation for radar systems
• Chassis mount packaging facilitates efficient thermal management and mechanical stability

Applications

• Pulsed L-band radar transmitters
• Military communication systems requiring high peak power
• Electronic warfare equipment

Procurement Notes

Verify the specific manufacturer source, as Microsemi Corporation has been acquired by Microchip Technology. Confirm that the ordering suffix matches the required electrical specifications and package type. Request the latest datasheet revision to ensure compliance with current manufacturing standards and material declarations. Validate part authenticity through authorized distribution channels to avoid counterfeit components.

Selection Notes

Select this component when designing systems requiring 370 watts of pulsed output power at L-band frequencies. Ensure the application supports common base topology and chassis mounting constraints. Verify that the thermal design accommodates the heat dissipation requirements associated with 330-microsecond pulses at a 10 percent duty cycle. Confirm compatibility with the 50-volt supply rail and 25-ampere current limits.

Part Context

This part belongs to the 1214 series of RF power transistors manufactured by Microsemi Corporation, now part of Microchip Technology. The series includes variants such as the 1214-110M and 1214-800P, offering different power levels for various radar and communication needs. These devices are characterized by their robust construction and suitability for demanding pulsed RF applications in defense and aerospace sectors.