1214GN-15E

Overview

The Microchip Technology 1214GN-15E is an E Class Earless Driver GaN Transistor designed for the L-Band frequency range of 1200–1400 MHz. It delivers a typical output power of 15 W with a drain efficiency exceeding 60% across the band. The device operates at a 50 VDD bias voltage and provides approximately 17.8 dB of power gain. Key electrical parameters include a maximum Drain-Source Voltage (VDSS) of 150 V, a storage temperature range of -55 to +125°C, and an operating junction temperature up to +200°C.

Feature Summary

• Utilizes Gallium Nitride (GaN) technology for high-power RF performance in the L-Band spectrum.
• Features extremely compact size with gold metallization and eutectic die attach for reliability.
• Supports both CW and pulsed operation modes with excellent gain flatness.
• Designed as an earless driver transistor with common source configuration.

Applications

• L-Band Radars
• Communication Systems
• Industrial Applications

Procurement Notes

Verify the specific manufacturer designation, as datasheets reference Microsemi while the brand is listed as Microchip Technology. Confirm the package outline matches the 55-QQP specification. Ensure compatibility with required bias voltages and thermal management solutions for the specified operating junction temperatures before procurement.

Selection Notes

Select this component for applications requiring high linearity and efficiency in the 1200–1400 MHz range. Consider the 50V bias requirement and the need for appropriate matching networks due to the lumped element input/output characteristics. Evaluate thermal dissipation capabilities against the 34W maximum power dissipation rating.

Part Context

This component belongs to the family of E Class Earless Driver GaN Transistors. It is engineered for robust performance in demanding RF environments, leveraging advanced semiconductor materials to achieve high power density and efficiency within a small footprint suitable for modern electronic systems.

Replacement Considerations

Consult Microsemi or Microchip Technology for verified substitute part numbers. Do not assume cross-compatibility with other GaN transistors without verifying pinout, electrical ratings, and thermal specifications.

FAQ

What is the typical power gain of the 1214GN-15E?

The typical power gain is 17.8 dB at frequencies between 1200 and 1400 MHz.

What is the maximum Drain-Source Voltage (VDSS)?

The maximum Drain-Source Voltage is 150 V.

Is the device suitable for CW operation?

Yes, the datasheet specifies support for both CW and Pulsed operation modes.