12A02SS-TL-E

$0.07

Description：BIP PNP 0.8A 12V
Series：*

SKU:d94887de789b Category: Bipolar RF Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：BIP PNP 0.8A 12V
Series：*
Mfr：onsemi
Package：Bulk
Transistor Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Frequency - Transition：-
Noise Figure (dB Typ @ f)：-
Gain：-
Power - Max：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Current - Collector (Ic) (Max)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
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12A02SS-TL-E

Overview

The 12A02SS-TL-E is a single NPN bipolar junction transistor manufactured by onsemi. It features a collector-emitter breakdown voltage of 30 V and a maximum continuous collector current of 700 mA. The device operates with a transition frequency of 540 MHz and supports a maximum power dissipation of 600 mW. DC current gain is specified at a minimum of 300 when tested at 50 mA and 2 V. The saturation voltage is limited to 190 mV at 10 mA base current and 200 mA collector current. The component utilizes a 3-MCPH surface-mount package, equivalent to SC-70 or SOT-323, and is rated for junction temperatures up to 150°C.

Feature Summary

High-frequency operation capability suitable for RF and switching applications
Low collector-to-emitter saturation voltage for efficient switching
Compact surface-mount footprint facilitating automated assembly

Applications

General-purpose high-speed switching circuits
Driver stages for low-power loads
Signal processing in consumer electronics

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and material declarations directly from the datasheet before finalizing procurement orders to meet regulatory requirements.

Selection Notes

Select this component for designs requiring a small-form-factor NPN transistor with moderate current handling and high-speed performance. Ensure the circuit design accounts for the 600 mW power dissipation limit and verify that the required current gain meets the minimum specification under actual operating conditions.

Part Context

This part belongs to the 30C02 series of small-signal NPN transistors. It shares core electrical characteristics with variants such as the 30C02MH-TL-E, differing primarily in packaging or manufacturing lot details. The series is designed for general-purpose amplification and switching tasks in portable and compact electronic devices.