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The Vishay 12TTS08S is a high-voltage phase control silicon controlled rectifier (SCR) designed for medium power switching applications. It features an 800 V repetitive peak reverse voltage and supports an average on-state current of 8 A with a maximum RMS current of 12.5 A. The device utilizes glass passivation technology to ensure reliable operation up to a junction temperature of 125 °C. Packaged in the TO-220AB outline, it offers a low on-state voltage drop of 1.2 V at 8 A and withstands non-repetitive surge currents up to 140 A.
Verify the specific suffix 'S' indicates the standard recovery rectifier variant within the TO-220 package configuration. Confirm that the component meets industrial level qualification requirements as specified in the datasheet. Ensure compatibility with existing heatsink designs given the thermal resistance characteristics defined for the TO-220AB case style.
Select this component for applications requiring robust phase control capabilities with moderate current handling. The 800 V rating suits general purpose AC line applications. Consider the thermal management requirements carefully, as the device relies on external heatsinking to maintain junction temperatures within the specified -40 to 125 °C operating range during continuous conduction.
This SCR belongs to the 12TTS08 High Voltage Series from Vishay High Power Products. The series is engineered for reliability in industrial environments. The 'S' designation distinguishes the standard recovery rectifier type within the TO-220 package family, differentiating it from other variants like the SMD-220 package options available in the broader product line.
Consult official Vishay documentation for direct cross-reference part numbers. Verify pinout compatibility and thermal resistance values when substituting with components from other manufacturers to ensure equivalent performance in phase control applications.
The device can withstand a peak half-sine wave on-state current of 140 A for one cycle at rated VRRM with no voltage reapplied.
The maximum required DC gate voltage to trigger decreases as temperature increases, ranging from 1.2 V at -65 °C to 0.7 V at 125 °C.
The typical turn-off time (tq) is specified as 100 µs at a junction temperature of 25 °C.