15C01C-TB-E

Overview

The onsemi 15C01C-TB-E is a single NPN bipolar junction transistor in the CP package, designed for low-frequency general-purpose amplifier applications. It features a maximum collector current of 600 mA and a collector-emitter voltage rating of 15 V. Key electrical parameters include a collector-base voltage of 20 V, an emitter-base voltage of 5 V, and a collector-emitter saturation voltage of 150 mV. The device offers a power dissipation capacity of 200 mW to 300 mW and a gain-bandwidth product of 330 MHz, with a maximum operating temperature of +150°C.

Feature Summary

• Low collector-to-emitter saturation voltage for efficient switching
• Large current capacity suitable for general-purpose amplification

Applications

• Low-frequency general-purpose amplifier circuits
• Switching applications requiring low saturation voltage

Procurement Notes

Verify the specific datasheet version for the 15C01C-TB-E variant, as power dissipation ratings may vary between 200 mW and 300 mW depending on the document revision. Confirm that the CP package type matches your PCB footprint requirements. Ensure the lead-free status aligns with your assembly process specifications before finalizing procurement.

Selection Notes

Select this component when a low-cost NPN transistor with high current capability and low saturation voltage is required for general-purpose amplification. The 15 V rating limits its use to low-voltage circuits. Consider the 330 MHz bandwidth if signal frequency approaches the upper limit of low-frequency applications.

Part Context

The 15C01C series belongs to onsemi's standard bipolar transistor portfolio, focusing on cost-effective solutions for consumer and industrial electronics. The TB-E suffix indicates a tape-and-reel packaging format optimized for automated surface-mount assembly, distinguishing it from bulk or other reel configurations within the same family.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter margins against potential alternatives such as other NPN transistors in the CP package with similar Vceo and Ic ratings.