15GN01MA-TL-E

Overview

The onsemi 15GN01MA-TL-E is an RF small signal bipolar transistor designed for ultra-high frequency applications. It features a single NPN silicon element housed in a 3-pin MCP (Small Outline) package with gull wing terminals. The device supports a maximum collector current of 0.05 A and a collector-emitter voltage of 8 V. Key electrical characteristics include a minimum DC current gain (hFE) of 200 and a maximum collector capacitance of 1.5 pF. It operates at a maximum junction temperature of 150 °C with a power dissipation rating of 0.4 W.

Feature Summary

• Optimized for ultra-high frequency band operations
• Integrated NPN configuration within a compact surface-mount package

Applications

• RF amplification circuits
• High-frequency signal processing
• Ultra-high frequency communication systems

Procurement Notes

Verify the specific manufacturer part number against official component documentation to ensure accuracy. Confirm that the package type, pin count, and electrical ratings match the design requirements. Check for any specific handling or storage instructions provided in the datasheet. Ensure compliance with relevant regulatory standards such as RoHS if applicable to the target market.

Selection Notes

Select this component for designs requiring high-frequency performance with low power consumption. Consider the 0.05 A current limit and 8 V voltage rating when defining circuit parameters. The SMT package facilitates automated assembly. Verify thermal management capabilities given the 0.4 W dissipation limit and 150 °C operating temperature.

Part Context

This component belongs to the category of discrete bipolar transistors manufactured by onsemi. It is specifically categorized as an RF small signal transistor intended for ultra-high frequency bands. The device utilizes silicon technology and is packaged in a standard small outline format suitable for surface mount applications.

Replacement Considerations

No publicly confirmed substitute part numbers are available in the provided data. Evaluate alternative RF transistors based on matching hFE, frequency response, and package dimensions.