15GN03FA-TL-H

Overview

The 15GN03FA-TL-H is an NPN RF transistor manufactured by onsemi, designed for high-frequency applications up to 1.5 GHz. It operates with a collector-emitter breakdown voltage of 10 V and supports a maximum continuous collector current of 70 mA. The device features a transition frequency (fT) of 1.5 GHz and a typical noise figure of 1.6 dB at 0.4 GHz. It provides a gain of 13 dB at 0.4 GHz with a maximum power dissipation of 200 mW. Packaged in a compact 3-CP surface-mount format, it functions within a junction temperature range of up to 150°C.

Feature Summary

• Optimized for radio frequency amplification with high transition frequency capabilities
• Low noise performance suitable for sensitive signal reception stages
• Compact surface-mount packaging facilitates automated assembly and space-constrained designs

Applications

• RF signal amplification in communication modules
• Low-noise amplifier (LNA) stages in wireless receivers
• High-frequency oscillator circuits

Procurement Notes

Verify the specific suffix TL-H against official datasheets to confirm tape-and-reel packaging and binning specifications. Ensure compatibility with RoHS and REACH regulations as defined in the manufacturer's environmental declarations. Cross-reference the Mouser or DigiKey part numbers for accurate ordering details and lead times.

Selection Notes

Select this component when designing circuits requiring NPN topology with a 10 V collector rating and operation near 1.5 GHz. Consider the 200 mW power dissipation limit and thermal management requirements for the 3-CP package. Evaluate the 1.6 dB noise figure against system sensitivity requirements for optimal signal-to-noise ratio performance.

Part Context

This part belongs to the 15GN03 series of RF transistors from onsemi, engineered for general-purpose high-frequency use. It complements other discrete semiconductor products in the company's portfolio, offering a balance of gain, noise, and power handling in a small form factor suitable for modern electronic devices.

Replacement Considerations

Consult official substitution guides for equivalent NPN RF transistors with matching 10 V ratings and 1.5 GHz fT. Verify pinout compatibility and electrical parameters such as noise figure and gain before replacing.