18N20F

Q: Is the 18N20F capable of handling repetitive avalanche energy?

Yes, the datasheet specifies that the device is 100% avalanche tested, with a single pulse avalanche energy rating of 90 mJ under defined test conditions.

Q: What is the maximum operating junction temperature for this MOSFET?

The maximum operating junction temperature (TJ) and storage temperature range (Tstg) extend up to 150°C.

$1.49

Description：N200V, 18A,RD<0.19@10V,VTH1.0V~3
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tube

SKU:208585279124 Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

Product Detailed Parameters

Description：N200V, 18A,RD<0.19@10V,VTH1.0V~3
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：852 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：35W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F
Package / Case：TO-220-3 Full Pack

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18N20F

Overview

The Goford Semiconductor 18N20F is an N-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It features a Drain-Source Voltage (VDS) of 200 V and a Continuous Drain Current (ID) of 18 A at VGS = 10V. The device exhibits a maximum Drain-Source On-Resistance (RDS(on)) of 190 mΩ under the same gate drive conditions. Key dynamic parameters include a total gate charge (Qg) of 18 nC, input capacitance (Ciss) of 852 pF, and reverse recovery time (Trr) of 239 ns. The component operates within a junction temperature range of -55°C to 150°C and is housed in a TO-220F package.

Feature Summary

Advanced trench technology provides low on-resistance and reduced gate charge for efficient switching performance.
100% avalanche tested to ensure robustness against inductive load switching events.

Applications

Power switch circuits
DC/DC converters

Procurement Notes

Verify the specific manufacturer designation as Goford Semiconductor when sourcing this component. Confirm that the ordering suffix corresponds to the TO-220F package with tube packaging containing 50 pieces per unit. Ensure compliance with RoHS standards as stated in the official product documentation before finalizing procurement specifications.

Selection Notes

Select the 18N20F for applications requiring a 200V breakdown voltage and up to 18A continuous current handling. The low RDS(on) of 190mΩ minimizes conduction losses, while the 18nC gate charge supports moderate-speed switching. Verify thermal management requirements based on the specified junction-to-ambient resistance of 50°C/W for your specific enclosure design.

Part Context

This component belongs to the family of N-Channel Enhancement Mode Power MOSFETs manufactured by Goford Semiconductor. It is designed for general-purpose power switching applications where high efficiency and reliability are required. The device integrates body diode characteristics suitable for synchronous rectification or freewheeling duties in converter topologies.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided source material.

FAQ

Is the 18N20F capable of handling repetitive avalanche energy?

Yes, the datasheet specifies that the device is 100% avalanche tested, with a single pulse avalanche energy rating of 90 mJ under defined test conditions.