1N4608

Overview

The Microchip Technology 1N4608 is a silicon switching diode housed in a DO-35 glass package. It features a minimum peak inverse voltage of 85 V and a maximum reverse leakage current of 100 µA at 50 V. The device supports an average rectified current of 200 mA and a continuous forward current up to 500 mA, with a peak surge current rating of 1.0 A. Forward voltage drop is specified at 1.10 V under 400 mA conditions. Reverse recovery time is 10 ns. Operating temperature ranges from -65 °C to +200 °C.

Feature Summary

• Metallurgically bonded construction for structural integrity
• Sigma Bond plating ensures reliable solderability
• Fast switching speed suitable for high-frequency applications

Applications

• General purpose signal switching
• Computer diode circuits
• Applications requiring controlled forward characteristics

Procurement Notes

Verify the specific manufacturer source, as the provided datasheet references BKC while the model is associated with Microchip Technology. Confirm RoHS compliance status and exact packaging details directly with the supplier. Ensure the component matches the required DO-35 through-hole package configuration before finalizing procurement orders.

Selection Notes

Select this component when a fast-recovery silicon switching diode is required for general-purpose logic or computer applications. The DO-35 glass package provides robust thermal performance within the extended operating range. Verify that the 85 V breakdown voltage meets the circuit's peak inverse voltage requirements.

Part Context

This part belongs to the family of small-signal switching diodes designed for high-speed digital and analog signal processing. It serves as a standard replacement for legacy germanium or early silicon diodes in vintage and modern equipment requiring precise switching characteristics.

Replacement Considerations

Consult official substitution lists for verified equivalents. Generic replacements must match the 85 V PIV, 10 ns trr, and DO-35 package constraints.