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The Microchip Technology 1N5312UR-1E3/TR is a surface-mount current regulator diode housed in a DO-213AB (MELF) glass package. It provides a nominal regulating current of 4.29 mA with a maximum working peak voltage of 100 V and a steady-state power dissipation of 500 mW at 125 °C. The device operates within a junction temperature range of -65 °C to +175 °C. Electrical characteristics include a minimum dynamic impedance of 4.29 MΩ and a maximum limiting voltage of 2.6 V.
Verify the specific ordering suffix against official manufacturer documentation to confirm compliance status and packaging type. Ensure that the procurement channel sources components directly from authorized distributors or the manufacturer to guarantee authenticity and traceability. Confirm that the delivered parts match the specified MIL-PRF-19500/463 qualification level if required by the design specifications.
Select this component when a precise constant current is required over a wide voltage span rather than voltage regulation. Evaluate the thermal resistance and derating requirements to ensure the 500 mW power dissipation limit is not exceeded at elevated ambient temperatures. Compare the 4.29 mA nominal current against circuit load requirements to determine suitability.
This part belongs to the 1N5283UR-1 through 1N5314UR-1 series of commercial-grade current regulator diodes. It serves as the JEDEC registered surface-mount equivalent to the axial-leaded 1N5283 through 1N5314 series, maintaining identical electrical performance in a compact DO-213AB package.
Direct equivalents include the non-RoHS version 1N5312UR-1 and the axial leaded variant 1N5312. Verify pinout compatibility and package dimensions before substitution.
The maximum working peak voltage (VWM) is 100 V.
Yes, the 'e3' suffix indicates that this commercial grade version is RoHS compliant.
The maximum limiting voltage (VK) is specified at 2.6 V under test conditions where the current is 0.8 times the nominal regulating current.