1N5402-E3/51

Overview

The Vishay 1N5402-E3/51 is a silicon rectifier diode rated for a maximum repetitive peak reverse voltage of 200 V and a maximum average forward rectified current of 3.0 A. It features a maximum non-repetitive peak forward surge current of 200 A, a typical junction capacitance of 30 pF at 4.0 V and 1 MHz, and a maximum instantaneous forward voltage of 1.2 V at 3.0 A. The device operates within a temperature range of -50 °C to +150 °C and utilizes a DO-201AD plastic package with matte tin plated leads.

Feature Summary

• Low forward voltage drop
• Low leakage current
• High forward surge capability

Applications

• General purpose rectification of power supplies
• Inverters
• Converters
• Freewheeling diodes application

Procurement Notes

Verify the specific ordering suffix /51 against official documentation to confirm the delivery mode and base quantity. Confirm RoHS compliance status as indicated by the E3 suffix. Ensure the component meets JESD 201 class 1A whisker test requirements if applicable to the design specifications.

Selection Notes

Select this component for general-purpose rectification where a 200 V blocking voltage and 3.0 A continuous current rating are required. Consider the DO-201AD through-hole package for standard mounting. Validate thermal resistance characteristics and derating curves for the specific ambient temperature conditions of the target application.

Part Context

This part belongs to the Vishay 1N5400 thru 1N5408 series of general purpose plastic rectifiers. These devices share common mechanical data, including a molded epoxy body meeting UL 94 V-0 flammability ratings and isolated case connections. The series covers various voltage ratings from 50 V to 1000 V while maintaining consistent current and surge capabilities.

Replacement Considerations

Consult official datasheets for cross-reference information. Verify that any substitute component matches the 200 V reverse voltage, 3.0 A forward current, and DO-201AD package dimensions.